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 RURU15070, RURU15080, RURU15090, RURU150100
April 1995
150A, 700V - 1000V Ultrafast Diodes
Package
JEDEC STYLE SINGLE LEAD TO-218
ANODE CATHODE (FLANGE)
Features
* Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . . .<125ns * Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . .+175 C * Reverse Voltage Up To . . . . . . . . . . . . . . . . . . . . . . . . . .1000V * Avalanche Energy Rated * Planar Construction
o
Applications
* Switching Power Supplies * Power Switching Circuits * General Purpose
Symbol
K
Description
RURU15070, RURU15080 and RURU15090 and RURU150100 are ultrafast diodes with soft recovery characteristics (tRR < 125ns). They have low forward voltage drop and are silicon nitride passivated ion-implanted epitaxial planar construction.
A
These devices are intended for use as freewheeling/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and ultrafast recovery with soft recovery characteristic minimizes ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors.
PACKAGING AVAILABILITY PART NUMBER RURU15070 RURU15080 RURU15090 RURU150100 PACKAGE TO-218 TO-218 TO-218 TO-218 BRAND RURU15070 RURU15080 RURU15090 RUR150100
NOTE: When ordering, use the entire part number.
Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified
RURU15070 Peak Repetitive Reverse Voltage . . . . . . . . . . . . . .VRRM Working Peak Reverse Voltage . . . . . . . . . . . . . . VRWM DC Blocking Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . VR Average Rectified Forward Current . . . . . . . . . . . . IF(AV) (TC = +65oC) Repetitive Peak Surge Current. . . . . . . . . . . . . . . . IFSM (Square Wave, 20kHz) Nonrepetitive Peak Surge Current . . . . . . . . . . . . . IFSM (Halfwave, 1 Phase, 60Hz) Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . PD Avalanche Energy (L = 40mH) . . . . . . . . . . . . . . . . EAVL Operating and Storage Temperature . . . . . . . . TSTG, TJ 700 700 700 150 300 1500 375 50 -65 to +175 RURU15080 800 800 800 150 300 1500 375 50 -65 to +175 RURU15090 900 900 900 150 300 1500 375 50 -65 to +175 RURU150100 1000 1000 1000 150 300 1500 375 50 -65 to +175 UNITS V V V A A A W mj oC
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright (c) Intersil Corporation 1999
File Number
3202.2
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Specifications RURU15070, RURU15080, RURU15090, RURU150100
Electrical Specifications
TC = +25oC, Unless Otherwise Specified LIMITS RURU15070 SYMBOL VF VF IR TEST CONDITION IF = 150A, TC = +25 C IF = 150A, TC = +150oC
o o o
RURU15080
RURU15090
RURU150100 TYP MAX 100 75 1.9 1.7 500 3.0 125 200 0.4 UNITS V V A A A A mA mA mA mA ns ns ns ns
oC/W
MIN -
TYP MAX MIN 100 75 1.9 1.7 500 3.0 125 200 0.4 -
TYP MAX MIN 100 75 1.9 1.7 500 3.0 125 200 0.4 -
TYP MAX MIN 100 75 1.9 1.7 500 3.0 125 200 0.4 -
VR = 700V, TC = +25 C VR = 800V, TC = +25 C VR = 900V, TC = +25oC
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VR = 1000V, TC = +25 C IR VR = 700V, TC = +150 C VR = 800V, TC = +150oC
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VR = 900V, TC = +150 C VR = 1000V, TC = +150 C tRR IF = 1A, dIF/dt = 100A/s IF = 150A, dIF/dt = 100A/s tA tB RJC DEFINITIONS IF = 150A, dIF/d t = 100A/s IF = 150A, dIF/dt = 100A/s
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VF = Instantaneous forward voltage (pw = 300s, D = 2%). IR = Instantaneous reverse current. tRR = Reverse recovery time (See Figure 2), summation of tA + tB. tA = Time to reach peak reverse current (See Figure 2). tB = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 2). RJC = Thermal resistance junction to case. EAVL = Controlled avalanche energy (See Figures 7 and 8). pw = pulse width. D = duty cycle.
V1 AMPLITUDE CONTROLS IF V2 AMPLITUDE CONTROLS dIF/dt R1 L1 = SELF INDUCTANCE OF R4 + LLOOP Q1 +V1 0 t2 t1 R2
+V3 Q2 t1 5tA(MAX) t2 > tRR t3 > 0 L1 tA(MIN) R4 10 LLOOP DUT Q4 0 0.25 IRM C1 R4 IRM IF
dIF dt
tRR tA tB
t3 0 -V2 R3
Q3 -V4 VR VRM
FIGURE 1. tRR TEST CIRCUIT
FIGURE 2. tRR WAVEFORMS AND DEFINITIONS
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RURU15070, RURU15080, RURU15090, RURU150100 Typical Performance Curves
FIGURE 3. TYPICAL FORWARD CURRENT vs FORWARD VOLTAGE DROP
FIGURE 4. TYPICAL REVERSE CURRENT vs VOLTAGE
FIGURE 5. TYPICAL tRR, tA AND tB CURVES vs FORWARD CURRENT
FIGURE 6. CURRENT DERATING CURVE FOR ALL TYPES
IMAX = 1A L = 40mH R < 0.1 EAVL = 1/2LI2 [VAVL/(VAVL - VDD)] Q1 & Q2 ARE 1000V MOSFETs Q1
L
R+ VDD
130
1M DUT VAVL
12V
Q2
130
CURRENT SENSE VDD -
IL IV
IL
12V
t0
t1
t2
t
FIGURE 7. AVALANCHE ENERGY TEST CIRCUIT
FIGURE 8. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS
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RURU15070, RURU15080, RURU15090, RURU150100
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
Sales Office Headquarters
NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (321) 724-7000 FAX: (321) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029
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